TrenchFET® 器件采用PowerPAK® SO-8S封裝,RthJC低至0.45 °C/W,ID高達144 A,從而提高功率密度日前,威世科技Vishay Intertechnology, Inc.(NYSE 股市代號:VSH)宣布,推出采用PowerPAK® SO-8S(QFN 6x5)封裝的全新150 V TrenchFET® Gen V N溝道功率MOSF... (來源:新品頻道)
Vishay 150 V MOSFET SiRS5700DP 2024-11-21 11:00